| PART |
Description |
Maker |
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| R1LV0416DBG-7LI R1LV0416DBG-5SI R1LV0416DSB-5SI R1 |
4M SRAM (256-kword 16-bit) 4分的SRAM56 - KWord的6位）
4M SRAM (256-kword ??16-bit)
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| AM99C10-10DCB AM99C10-10JCB |
256 X 16 CONTENT ADDRESSABLE SRAM, 65 ns, CDIP28
256 X 16 CONTENT ADDRESSABLE SRAM, 65 ns, PQCC32
|
ADVANCED MICRO DEVICES INC
|
| LC33832M LC33832ML-10 LC33832ML-70 LC33832ML-80 LC |
256K (32768word x 8bit) Pseudo-SRAM
256 K (32768 words X 8 bits) Pseudo-SRAM 256度（32768字8位）伪SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| HM62V16256CBP HM62V16256CLBP-5 HM62V16256CLBP-5SL |
4 M SRAM (256-kword ′ 16-bit)
|
Renesas Electronics Corporation
|
| HM62W16258B HM62W16258BLTT-5 HM62W16258BLTT-5SL HM |
4 M SRAM (256-kword ′ 16-bit)
4 M SRAM (256-kword ? 16-bit)
|
Renesas Electronics Corporation
|
